NTGS3130N, NVGS3130N دیتاشیت

NTGS3130N, NVGS3130N

مشخصات دیتاشیت

نام دیتاشیت NTGS3130N, NVGS3130N
حجم فایل 236.167 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NTGS3130N, NVGS3130N

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVGS3130NT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 600mW
  • Total Gate Charge (Qg@Vgs): 20.3nC@4.5V
  • Input Capacitance (Ciss@Vds): 935pF@16V
  • Continuous Drain Current (Id): 4.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@5.6A,4.5V
  • Package: SOT-23-6
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 16V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
  • Base Part Number: NVGS31
  • detail: N-Channel 20V 4.2A (Ta) 600mW (Ta) Surface Mount 6-TSOP

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